FDS6673BZ MOSFET Transistor

The FDS6673BZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6673BZ transistor as follows.

FDS6673BZ Transistor Specification

Transistor Code		FDS6673BZ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	14.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0078Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		88nC

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