FDS6673AZ MOSFET Transistor

The FDS6673AZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6673AZ transistor as follows.

FDS6673AZ Transistor Specification

Transistor Code		FDS6673AZ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	14.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0072Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1190pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		118nC

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