FDS6672A MOSFET Transistor

The FDS6672A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6672A transistor as follows.

FDS6672A Transistor Specification

Transistor Code		FDS6672A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	12.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		2V

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