FDS6575 MOSFET Transistor

The FDS6575 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6575 transistor as follows.

FDS6575 Transistor Specification

Transistor Code		FDS6575
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		53nC

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