FDS6572A MOSFET Transistor

The FDS6572A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6572A transistor as follows.

FDS6572A Transistor Specification

Transistor Code		FDS6572A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1433pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1.5V

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