FDS6064N3 MOSFET Transistor

The FDS6064N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6064N3 transistor as follows.

FDS6064N3 Transistor Specification

Transistor Code		FDS6064N3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		1403pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		98nC

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