FDS4465 MOSFET Transistor

The FDS4465 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS4465 transistor as follows.

FDS4465 Transistor Specification

Transistor Code		FDS4465
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	13.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		86nC

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