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FDS4435BZ MOSFET Transistor

The FDS4435BZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS4435BZ transistor as follows.

Circuit diagram symbol of the FDS4435BZ transistor

FDS4435BZ Transistor Specification

Transistor Code FDS4435BZ
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOIC
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 8.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 2.5W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 28nC

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