FDS4435A MOSFET Transistor

The FDS4435A is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS4435A transistor as follows.

FDS4435A Transistor Specification

Transistor Code		FDS4435A
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		30nC

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