FDS3580 MOSFET Transistor

The FDS3580 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS3580 transistor as follows.

FDS3580 Transistor Specification

Transistor Code		FDS3580
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		34nC

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