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FDS2170N7 MOSFET Transistor

The FDS2170N7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS2170N7 transistor as follows.

Circuit diagram symbol of the FDS2170N7 transistor

FDS2170N7 Transistor Specification

Transistor Code FDS2170N7
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.128Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 72pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 4.5V

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