FDR856P MOSFET Transistor

The FDR856P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDR856P transistor as follows.

FDR856P Transistor Specification

Transistor Code		FDR856P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SUPERSOT8
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	6.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	1.8W
Operating Junction Temperature (Maximum)		150°C

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