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FDR840P MOSFET Transistor

The FDR840P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDR840P transistor as follows.

Circuit diagram symbol of the FDR840P transistor

FDR840P Transistor Specification

Transistor Code FDR840P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SSOT-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 1.8W
Drain-Source Capacitance 1532pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 1.5V

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