FDP8878 MOSFET Transistor

The FDP8878 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP8878 transistor as follows.

FDP8878 Transistor Specification

Transistor Code		FDP8878
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	40.5W
Drain-Source Capacitance		188pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		244nS
Gate-Threshold Voltage (Maximum)		2.5V

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