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FDP7N60NZ MOSFET Transistor

The FDP7N60NZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP7N60NZ transistor as follows.

Circuit diagram symbol of the FDP7N60NZ transistor

FDP7N60NZ Transistor Specification

Transistor Code FDP7N60NZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.25Ohm
Power Dissipation (Maximum) PD 147W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 13nC

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