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FDP79N15 MOSFET Transistor

The FDP79N15 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP79N15 transistor as follows.

Circuit diagram symbol of the FDP79N15 transistor

FDP79N15 Transistor Specification

Transistor Code FDP79N15
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 79A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 463W
Drain-Source Capacitance 730pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V

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