FDP75N08 MOSFET Transistor

The FDP75N08 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP75N08 transistor as follows.

FDP75N08 Transistor Specification

Transistor Code		FDP75N08
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	137W
Drain-Source Capacitance		738pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		212nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		104nC

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