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FDP6670AL MOSFET Transistor

The FDP6670AL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP6670AL transistor as follows.

Circuit diagram symbol of the FDP6670AL transistor

FDP6670AL Transistor Specification

Transistor Code FDP6670AL
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0065Ohm
Power Dissipation (Maximum) PD 75W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 33nC

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