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FDP603AL MOSFET Transistor

The FDP603AL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP603AL transistor as follows.

Circuit diagram symbol of the FDP603AL transistor

FDP603AL Transistor Specification

Transistor Code FDP603AL
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 33A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 19nC

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