FDP6035AL MOSFET Transistor

The FDP6035AL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP6035AL transistor as follows.

FDP6035AL Transistor Specification

Transistor Code		FDP6035AL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	58W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		13nC

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