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FDP39N20 MOSFET Transistor

The FDP39N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP39N20 transistor as follows.

Circuit diagram symbol of the FDP39N20 transistor

FDP39N20 Transistor Specification

Transistor Code FDP39N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 39A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.066Ohm
Power Dissipation (Maximum) PD 251W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 38nC

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