FDP3651U MOSFET Transistor

The FDP3651U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP3651U transistor as follows.

FDP3651U Transistor Specification

Transistor Code		FDP3651U
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	255W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		49nC

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