FDP2710 MOSFET Transistor

The FDP2710 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP2710 transistor as follows.

FDP2710 Transistor Specification

Transistor Code		FDP2710
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0425Ohm
Power Dissipation (Maximum)	PD	260W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		78nC

UXPython is not the creator or an official representative of the FDP2710 MOSFET transistor. You can download the official FDP2710 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IXTP120N04T2 MOSFET Transistor IXTP60N10T MOSFET Transistor SPP12N50C3 MOSFET Transistor IRLZ34A MOSFET Transistor IXTP2R4N120P MOSFET Transistor SM6F24NSF MOSFET Transistor HFP70N03V MOSFET Transistor SM7510NSF MOSFET Transistor SSF7509B MOSFET Transistor SM7A24NSF MOSFET Transistor STP20N95K5 MOSFET Transistor FCP104N60 MOSFET Transistor IXFP12N50P MOSFET Transistor CEP02N65G MOSFET Transistor IXTP96P085T MOSFET Transistor IXTP28P065T MOSFET Transistor IRFI640G MOSFET Transistor IXTP90N055T2 MOSFET Transistor IPP60R280C6 MOSFET Transistor IXTP08N100P MOSFET Transistor