FDP26N40 MOSFET Transistor

The FDP26N40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP26N40 transistor as follows.

FDP26N40 Transistor Specification

Transistor Code		FDP26N40
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	265W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		48nC

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