FDP19N40 MOSFET Transistor

The FDP19N40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP19N40 transistor as follows.

FDP19N40 Transistor Specification

Transistor Code		FDP19N40
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	215W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		40nC

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