FDP15N65 MOSFET Transistor

The FDP15N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP15N65 transistor as follows.

FDP15N65 Transistor Specification

Transistor Code		FDP15N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.44Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		295pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		5V

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