FDP10AN06A0 MOSFET Transistor

The FDP10AN06A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP10AN06A0 transistor as follows.

FDP10AN06A0 Transistor Specification

Transistor Code		FDP10AN06A0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	135W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		128nS
Gate-Threshold Voltage (Maximum)		4V

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