FDP025N06 MOSFET Transistor

The FDP025N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP025N06 transistor as follows.

FDP025N06 Transistor Specification

Transistor Code		FDP025N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	265A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	395W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		174nC

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