FDP023N08B MOSFET Transistor

The FDP023N08B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP023N08B transistor as follows.

FDP023N08B Transistor Specification

Transistor Code		FDP023N08B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00235Ohm
Power Dissipation (Maximum)	PD	245W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		3.8V
Total Gate Charge		150nC

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