FDN8601 MOSFET Transistor

The FDN8601 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDN8601 transistor as follows.

FDN8601 Transistor Specification

Transistor Code		FDN8601
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SSOT
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.109Ohm
Power Dissipation (Maximum)	PD	1.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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