FDN5618P MOSFET Transistor

The FDN5618P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDN5618P transistor as follows.

FDN5618P Transistor Specification

Transistor Code		FDN5618P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SSOT
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V

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