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FDN361BN MOSFET Transistor

The FDN361BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDN361BN transistor as follows.

Circuit diagram symbol of the FDN361BN transistor

FDN361BN Transistor Specification

Transistor Code FDN361BN
Transistor Type MOSFET
Control Channel Type N-Channel
Package SSOT
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.11Ohm
Power Dissipation (Maximum) PD 0.5W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V

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