FDN306P MOSFET Transistor

The FDN306P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDN306P transistor as follows.

FDN306P Transistor Specification

Transistor Code		FDN306P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SSOT
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		12nC

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