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FDMS9600S MOSFET Transistor

The FDMS9600S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS9600S transistor as follows.

Circuit diagram symbol of the FDMS9600S transistor

FDMS9600S Transistor Specification

Transistor Code FDMS9600S
Transistor Type MOSFET
Control Channel Type N-Channel
Package MLP5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0085Ohm
Power Dissipation (Maximum) PD 2.5W
Operating Junction Temperature (Maximum) 150°C

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