FDMS8880 MOSFET Transistor

The FDMS8880 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8880 transistor as follows.

FDMS8880 Transistor Specification

Transistor Code		FDMS8880
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	42W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		23nC

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