FDMS8690 MOSFET Transistor

The FDMS8690 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8690 transistor as follows.

FDMS8690 Transistor Specification

Transistor Code		FDMS8690
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	37.8W
Drain-Source Capacitance		535pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		1.8nS
Gate-Threshold Voltage (Maximum)		3V

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