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FDMS8670S MOSFET Transistor

The FDMS8670S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8670S transistor as follows.

Circuit diagram symbol of the FDMS8670S transistor

FDMS8670S Transistor Specification

Transistor Code FDMS8670S
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0035Ohm
Power Dissipation (Maximum) PD 2.5W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 73nC

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