FDMS86520L MOSFET Transistor

The FDMS86520L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86520L transistor as follows.

FDMS86520L Transistor Specification

Transistor Code		FDMS86520L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0082Ohm
Power Dissipation (Maximum)	PD	69W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		45nC

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