FDMS86255ET150 MOSFET Transistor

The FDMS86255ET150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86255ET150 transistor as follows.

FDMS86255ET150 Transistor Specification

Transistor Code		FDMS86255ET150
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0124Ohm
Power Dissipation (Maximum)	PD	136W
Drain-Source Capacitance		291pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		4.5nS
Gate-Threshold Voltage (Maximum)		4V

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