FDMS86202ET120 MOSFET Transistor

The FDMS86202ET120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86202ET120 transistor as follows.

FDMS86202ET120 Transistor Specification

Transistor Code		FDMS86202ET120
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	102A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0072Ohm
Power Dissipation (Maximum)	PD	187W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8.75nS
Gate-Threshold Voltage (Maximum)		4V

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