FDMS86202 MOSFET Transistor

The FDMS86202 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86202 transistor as follows.

FDMS86202 Transistor Specification

Transistor Code		FDMS86202
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	64A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0072Ohm
Power Dissipation (Maximum)	PD	156W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		45nC

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