FDMS86200DC MOSFET Transistor

The FDMS86200DC is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86200DC transistor as follows.

FDMS86200DC Transistor Specification

Transistor Code		FDMS86200DC
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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