FDMS86200 MOSFET Transistor

The FDMS86200 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86200 transistor as follows.

FDMS86200 Transistor Specification

Transistor Code		FDMS86200
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	104W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		33nC

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