FDMS86150ET100 MOSFET Transistor

The FDMS86150ET100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86150ET100 transistor as follows.

FDMS86150ET100 Transistor Specification

Transistor Code		FDMS86150ET100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	128A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00485Ohm
Power Dissipation (Maximum)	PD	187W
Drain-Source Capacitance		696pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8.3nS
Gate-Threshold Voltage (Maximum)		4V

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