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FDMS86150A MOSFET Transistor

The FDMS86150A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86150A transistor as follows.

Circuit diagram symbol of the FDMS86150A transistor

FDMS86150A Transistor Specification

Transistor Code FDMS86150A
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.00485Ohm
Power Dissipation (Maximum) PD 2.7W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 47nC

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