FDMS86105 MOSFET Transistor

The FDMS86105 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86105 transistor as follows.

FDMS86105 Transistor Specification

Transistor Code		FDMS86105
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.034Ohm
Power Dissipation (Maximum)	PD	48W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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