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FDMS8090 MOSFET Transistor

The FDMS8090 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8090 transistor as follows.

Circuit diagram symbol of the FDMS8090 transistor

FDMS8090 Transistor Specification

Transistor Code FDMS8090
Transistor Type MOSFET
Control Channel Type N-Channel
Package MLP5X6
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 59W
Operating Junction Temperature (Maximum) 150°C

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