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FDMS8050ET30 MOSFET Transistor

The FDMS8050ET30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8050ET30 transistor as follows.

Circuit diagram symbol of the FDMS8050ET30 transistor

FDMS8050ET30 Transistor Specification

Transistor Code FDMS8050ET30
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWER56
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 423A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.00065Ohm
Power Dissipation (Maximum) PD 180W
Drain-Source Capacitance 4455pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 22nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 204nC

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