FDMS8050 MOSFET Transistor

The FDMS8050 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8050 transistor as follows.

FDMS8050 Transistor Specification

Transistor Code		FDMS8050
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00065Ohm
Power Dissipation (Maximum)	PD	2.7W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		204nC

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