FDMS8020 MOSFET Transistor

The FDMS8020 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8020 transistor as follows.

FDMS8020 Transistor Specification

Transistor Code		FDMS8020
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	65W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		43nC

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